Photoemission study of sulfur and oxygen adsorption on GaN()-Reference-Cited by-同舟云学术

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Photoemission study of sulfur and oxygen adsorption on GaN()

Published:2006-01 Issue:1 Volume:600 Page:116-123
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Plucinski Lukasz,Colakerol Leyla,Bernardis Sarah,Zhang Yufeng,Wang Shancai,O’Donnell Cian,Smith Kevin E.,Friel I.,Moustakas T.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference34 articles.

1. A sulfur passivation for GaAs surface by an organic molecular, CH3CSNH2 treatment

2. Effects of sulfur passivation on Ti/Al ohmic contacts to n-type GaN using CH3CSNH2 solution

3. Investigation of accumulated carrier mechanism on sulfurated GaN layers

4. Modification of GaAs(100) and GaN(0001) surfaces by treatment in alcoholic sulfide solutions

5. Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN;Applied Physics Express;2018-08-31

2. Review of bias-temperature instabilities at the III-N/dielectric interface;Microelectronics Reliability;2018-03

3. Effects of Potassium Adsorption and Potassium–Water Coadsorption on the Chemical and Electronic Properties of n-Type GaN(0001) Surfaces;The Journal of Physical Chemistry C;2018-02-19

4. Co-adsorption of water and oxygen on GaN: Effects of charge transfer and formation of electron depletion layer;The Journal of Chemical Physics;2017-09-14

5. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

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