Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN-Reference-Cited by-同舟云学术

Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN

Published:2018-08-31 Issue:10 Volume:11 Page:105701
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Ueda Shigenori^ORCID

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=10/a=105701/pdf

Reference23 articles.

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4. Enhancement of surface-atom intensities in X-ray photoelectron spectra at low X-ray incidence angles

5. Sample current maximum at the critical angle of x‐ray total reflection

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