Effective sulfur passivation of an n-type GaN surface by an alcohol-based sulfide solution
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373107
Reference15 articles.
1. HBT devices and circuits for signal and data processing
2. AlGaN/GaN double heterostructure channel modulation doped field effect transistors (MODFETs)
3. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
4. AlGaN/GaN quantum well ultraviolet light emitting diodes
5. Piezoelectric doping and elastic strain relaxation in AlGaN–GaN heterostructure field effect transistors
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