Affiliation:
1. State Key Laboratory of Advanced Displays and Optoelectronics Technologies Hong Kong University of Science and Technology
2. Department of Electrical and Electronic Engineering Southern University of Science and Technology
Abstract
Ultraviolet band‐C (UV‐C) micro‐light‐emitting diodes (Micro‐LEDs) with high optical power density are increasingly demanded in the utilization of sterilization, solar‐blind communications, and neuroscience for the robust structure and adjustable emission wavelength. In this work, AlGaN UV‐C Micro‐LEDs are fabricated and characterized in 5×5, 10×10, 20×20, 30×30, 50×50, 80×80, and 100×100 μm2. With pixel size scaling down, the smaller devices have the potential to emit more considerable light output power (LOP) density at the same injected current density. This LOP density sizing effect implies higher luminescence efficiencies on small‐sized UV‐C Micro‐LEDs, which could be widely adopted by the industry.
Reference17 articles.
1. AlGaN multiple quantum well deep‐ultraviolet micro‐light‐emitting diodes for high color conversion efficiency quantum dots display;Feng F;Journal of the Society for Information Display,2022
2. AlGaN-Based Deep-UV Micro-LED Array for Quantum Dots Converted Display With Ultra-Wide Color Gamut;Feng F;IEEE Electron Device Letters,2021
3. P‐76: Elimination of Nanorods by Tetramethylammonium Hydroxide for the Fabrication of AlGaN‐based UV‐C Micro‐LED Array
4. Monolithically integrated UVC AlGaN-based multiple quantum wells structure and photonic chips for solar-blind communications;He R;Nano Energy,2022