Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing-Reference-Cited by-同舟云学术

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Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

Published:2016-12 Issue: Volume:456 Page:155-159
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Miyake Hideto,Lin Chia-Hung,Tokoro Kenta,Hiramatsu Kazumasa

Funder

Akasaki Research Center of Nagoya University

MEXT

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)

3. Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN

4. Large-area AlN substrates for electronic applications: An industrial perspective

5. Preparation of Bulk AlN Seeds by Spontaneous Nucleation of Freestanding Crystals

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1. High-performance solar-blind photodetector of β-Ga2O3 grown on sapphire with embedding an ultra-thin AlN buffer layer;Journal of Alloys and Compounds;2024-11

2. Fabrication of non-polar AlN films by ICP etching and overgrowth by MBE;Journal of Crystal Growth;2024-11

3. First-principles study of charge states effects of nitrogen vacancies on phonon properties in III-nitride semiconductors;Computational Materials Science;2024-09

4. Elimination of V‐Shaped Pits in Thick InGaN Layers via Ammonia‐Assisted Face‐to‐Face Annealing;physica status solidi (a);2024-08-23

5. GaN thickness dependence of GaN/AlN superlattices on face-to-face-annealed sputter-deposited AlN templates;Journal of Applied Physics;2024-08-19

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