Dimension dependence of current injection path in GaInN/GaN multi-quantum-shell (MQS) nanowire-based light-emitting diode arrays
Author:
Katsuro Sae1, Lu Weifang23ORCID, Ito Kazuma1, Nakayama Nanami1, Inaba Soma1, Shima Ayaka1, Yamamura Shiori1, Jinno Yukimi1, Sone Naoki1, Huang Kai23, Iwaya Motoaki1, Takeuchi Tetsuya1, Kamiyama Satoshi1
Affiliation:
1. Department of Materials Science and Engineering , Meijo University , 1-501 Shiogamaguchi, Tenpaku-ku , Nagoya , 468-8502 , Japan 2. Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics , Xiamen University , Xiamen 361005 , China 3. Future Display Institute in Xiamen , Xiamen 361005 , China
Abstract
Abstract
To light emitting diodes (LEDs), solving the common non-uniform current injection and efficiency degradation issues in (0001) plane micro-LED is essential. Herein, we investigated the light emission characteristics of various mesa sizes and different p-electrode areas toward the realization of coaxial GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs)-based micro-LEDs. As the mesa area was reduced, the current leakage decreases, and further reduction of the area showed a possibility of realizing micro-LED with less current leakage. The large leakage path is mainly associated with the defective MQS structure on the (0001) plane area of each NW. Therefore, more NWs involved in an LED chip will induce higher reverse leakage. The current density-light output density characteristics showed considerably increased electroluminescence (EL) intensity as the mesa area decreased, owing to the promoted current injection into the efficient NW sidewalls under high current density. The samples with a mesa area of 50 × 50 µm2 showed 1.68 times higher light output density than an area of 100 × 100 µm2 under a current density of 1000 A/cm2. In particular, the emission from (1-101) and (10-10) planes did not exhibit an apparent peak shift caused by the quantum-confined Stark effect. Furthermore, by enlarging the p-electrode area, current can be uniformly injected into the entire chip with a trade-off of effective injection to the sidewall of each NW. High performance of the MQS NW-based micro-LED can be expected because of the mitigated efficiency degradation with a reducing mesa area and an optimal dimension of p-electrode.
Funder
Japan Society for the Promotion of Science Core Research for Evolutional Science and Technology Ministry of Education, Culture, Sports, Science and Technology
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
Reference49 articles.
1. I. Akasaki and H. Amano, “Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters,” Jpn. J. Appl. Phys., vol. 36, p. 5393, 1997. https://doi.org/10.1143/jjap.36.5393. 2. I. Akasaki and H. Amano, “Breakthroughs in improving crystal quality of GaN and invention of the p–n junction blue-light-emitting diode,” Jpn. J. Appl. Phys., vol. 45, p. 9001, 2006. https://doi.org/10.1143/jjap.45.9001. 3. R. Chaji, E. Fathi, and A. Zamani, 19‐5: Invited Paper: Low‐Cost Micro‐LED Displays for All Applications, SID Symposium Digest of Technical Papers, Wiley Online Library, 2017, pp. 264–267. 4. K. Ding, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, “Micro-LEDs, a manufacturability perspective,” Appl. Sci., vol. 9, p. 1206, 2019. https://doi.org/10.3390/app9061206. 5. F. Xu, Y. Tan, Z. Xie, and B. Zhang, “Implantation energy-and size-dependent light output of enhanced-efficiency micro-LED arrays fabricated by ion implantation,” Opt. Express, vol. 29, pp. 7757–7766, 2021. https://doi.org/10.1364/oe.421272.
|
|