Author:
Efremov A. M.,Yudina A. V.,Svettsov V. I.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Plazmennaya tekhnologiya v proizvodstve SBIS (Plasma Technology in VLSI Production) Ainspruk, N. and Braun, D., Eds., Moscow: Mir, 1987.
2. Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, vol. 1: Process Technology, New York: Lattice Press, 2000.
3. Pearton, S.J., Ren, F., and Abernathy, C.R., Temperature-Dependent Dry Etching Characteristics of III-V Semiconductors in HBr- and HI-Based Discharges, Plasma Chem. Plasma Process., 1994, vol. 14, no. 2, p. 131.
4. Efremov, A.M., Svettsov, V.I., Sitanov, D.V., and Balashov, D.I., Kinetics and Mechanisms of Cl2 or HCl Plasma Etching of Copper, Thin Solid Films, 2008, vol. 516, pp. 4020–4027.
5. Efremov, A.M., Pivovarenok, S.A., and Svettsov, V.I., Plasma Parameters and Etching Mechanisms of Metals and Semiconductors in Hydrogen Chloride, Russ. Microelectron., 2009, vol. 38, no. 3, pp. 147–159.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献