Author:
Efremov A. M.,Murin D. B.,Leventsov A. E.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Efremov, A.M., Svetsov, V.I., Dunaev, A.V., Pivovarenok, S.A., and Kapinos, S.P., Spectral study of gallium arsenide etching in HCl plasma, Russ. Microelectron., 2011, vol. 40, no. 6, pp. 371–379.
2. Pasynkov, V.V. and Sorokin, V.S., Materialy elektronnoi tekhniki: uch. dlya stud. vuzov po spets. elektronnoi tekhniki (Materials of Electronic Devices: Textbook for Students of “Electronic Devices” Specialty), SaintPetersburg: Lan’, 2001.
3. Franz, G., Kelp, A., and Messerer, P., Analysis of chlorine-containig plasmas applied in III/V semiconductor processing, J. Vac. Sci. Technol., 2000, vol. 18, no. 5, pp. 2053–2061.
4. Ibbotson, D.E., Plasma and gaseous etching of compounds of Groups III–V, Pure and Appl. Chem., 1988, vol. 60, no. 5, pp. 703–708.
5. Shul, R.J., McClellan, G.B., and Briggs, R.D., High-density plasma etching of compound semiconductors, J. Vac. Sci. Technol., 1997, vol. 15, no. 3, pp. 633–638.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献