Author:
Murin D. B.,Chesnokov I. A.,Gogulev I. A.,Grishkov A. E.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (Application of Low-Temperature Plasma for Etching and Cleaning of Materials), Moscow: Energatomizdat, 1987.
2. Dunaev, A.V., Sitanov, D.V., and Murin, D.B., General features of interaction between copper and chlorine-containing gases, High Energy Chem., 2017, vol. 51, no. 3, pp. 224–228. https://doi.org/10.1134/s0018143917030031
3. Wang, Ya-F., Lee, W.-J., Chen, Ch.-Yu., and Hsieh, L.-T., Reaction mechanisms in both a CCl2F2/O2/Ar and a CCl2F2/H2/Ar RF radio frequency plasma environment, Ind. Eng. Chem. Res., 2000, vol. 38, no. 9, pp. 3199–3210. https://doi.org/10.1021/ie9900519
4. Stoffels, W.W., Stoffels, E., Haverlag, M., Kroesen, G.M.W., and de Hoog, F.J., The chemistry of a CCl2F2 radio frequency discharge, J. Vac. Sci. Technol., A, 1995, vol. 13, no. 4, pp. 2058–2066. https://doi.org/10.1116/1.579652
5. Efremov, A.M., Murin, D.B., and Leventsov, A.E., Kinetics and modes of plasmachemical etching of GaAs under conditions of induction HF discharge in CF2Cl2, Russ. Microelectron., 2014, vol. 43, no. 6, pp. 401–406. https://doi.org/10.1134/s1063739714060031