1. Plasma Technology in VLSI Production, Einspruk, N. and Brown, D., Eds., New York, 1990. Translated under the title Plazmennaya tekhnologiya v proizvodstve SBIS, Moscow: Mir, 1987.
2. Danilin, B.S. and Kireev, V.Yu., Primenenie Nizkotemperaturnoi Plazmy dlya Travleniya i Ochistki Materialov (Application of Low-Temperature Plasma to Material Etching and Cleaning), Moscow: Energoatomizdat, 1987.
3. Wolf, S. and Tauber, R.N., Silicon Processing for the VLSI Era, Vol. 1: Process Technology, New York: Lattice Press, 2000.
4. Efremov, A.M., Pivovarenok, S.A., and Svettsov, V.I., Kinetics and Mechanisms of Plasma Chemical Etching of Copper in Chlorine and Hydrogen Chloride, Mikroelektronika, 2007, vol. 36, no. 6, p. 409.
5. Efremov, A.M., Svettsov, V.I., Sitanov, D.V., and Balashov, D.I., A Comparative Study of Plasma Parameters and Gas Phase Compositions in Cl2 and HCl Direct Current Glow Discharges, Thin Solid Films, 2008, vol. 516, p. 3020.