1. Galperin, V.A., Danilkin, E.V., and Mochalov, A.I., Protsessy plazmennogo travleniya v mikro- i nanotekhnologiyakh (Plasma Etching Processes in Micro- and Nanotechnologies), Timoshenkov, S.P., Ed., Moscow: BINOM, 2018.
2. Danilin, B.S. and Kireev, V.Yu., Primenenie nizkotemperaturnoi plazmy dlya travleniya i ochistki materialov (Application of Low-Temperature Plasma for Etching and Cleaning of Materials), Danilin, B.S., Ed., Moscow: Energoatomizdat, 1987.
3. Svettsov, V.I. and Efremov, A.M., Vakuumnaya i plazmennaya elektronika: ucheb. posobie (Vacuum and Plasma Electronics, The School-Book), Ivanovo: Ivan. Gos. Khim.-Tekhnol. Univ., 2003.
4. Pivovarenok, S.A., Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma, Russ. Microelectron., 2017, vol. 46, no. 3, pp. 211–215.
5. Pivovarenok, S.A., The effect of an N2 additive on the GaAs etching rate in CF2Cl2 plasma, Russ. Microelectron., 2019, vol. 48, no. 4, pp. 236–239.