35.3: Distinguished Paper: A Novel Self-Aligned Top-Gate Oxide TFT for AM-OLED Displays
Author:
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1889/1.3621360/fullpdf
Reference9 articles.
1. 3.1: Distinguished Paper: 12.1-Inch WXGA AMOLED Display Driven by Indium-Gallium-Zinc Oxide TFTs Array
2. 69.2: Highly Reliable Oxide-Semiconductor TFT for AM-OLED Display
3. 631 2010
4. 42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs
5. Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
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1. Highly Stable, Self-Aligned Coplanar a-InGaZnO TFTs With Oxide and Hydrogenated Amorphous Si Contacts;IEEE Electron Device Letters;2023-12
2. Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield;IEEE Electron Device Letters;2022-04
3. Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect;ACS Applied Materials & Interfaces;2022-01-03
4. High‐reliability gate driver circuit to prevent ripple voltage;Journal of the Society for Information Display;2020-10-08
5. 8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions;SID Symposium Digest of Technical Papers;2019-09
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