High‐reliability gate driver circuit to prevent ripple voltage-Reference-Cited by-同舟云学术

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High‐reliability gate driver circuit to prevent ripple voltage

Published:2020-10-08 Issue:1 Volume:29 Page:68-77
ISSN:1071-0922
Container-title:Journal of the Society for Information Display
language:en
Short-container-title:J Soc Inf Display

Author:

Lee Jungwoo¹^ORCID,Oh Jongsu¹^ORCID,Jung Eun Kyo¹,Park KeeChan²^ORCID,Jeon Jae‐Hong³^ORCID,Lee Soo‐Yeon⁴,Kim Yong‐Sang¹

Affiliation:

1. Department of Electrical and Computer Engineering Sungkyunkwan University Suwon 16419 South Korea

2. Department of Electronics Engineering Konkuk University Seoul 05029 South Korea

3. School of Electronics and Information Engineering Korea Aerospace University Goyang 10540 South Korea

4. Department of Electrical and Computer Engineering Seoul National University Seoul 08826 South Korea

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jsid.969

Reference17 articles.

1. High‐performance hydrogenated amorphous‐Si TFT for AMLCD and AMOLED applications;Chen C‐W;IEEE Electron Device Lett,2005

2. 46.1:Invited Paper: Integrated a-Si:H TFT Gate Driver Circuits on Large Area TFT-LCDs

3. Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

4. Design of a low-power-consumption a-IGZO TFT-based Vcom driver circuit with long-term reliability

5. Amorphous‐oxide TFT backplane for large‐sized AMOLED TVs;Mo YG;J Soc Inf Disp,2012

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1. Floating body effect in indium–gallium–zinc–oxide (IGZO) thin-film transistor (TFT);Scientific Reports;2024-05-02

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