Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect-Reference-Cited by-同舟云学术

Cation Composition-Dependent Device Performance and Positive Bias Instability of Self-Aligned Oxide Semiconductor Thin-Film Transistors: Including Oxygen and Hydrogen Effect

Published:2022-01-03 Issue:1 Volume:14 Page:1389-1396
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jang Jun Tae¹,Kim Donguk¹,Baeck Ju Heyuck²,Bae Jong Uk³,Noh Jiyong²,Lee Seok-Woo²,Park Kwon-Shik²,Kim Jeom Jae²,Yoon Soo Young²,Kim Changwook⁴,Kim Yong-Sung⁵^ORCID,Oh Saeroonter⁶^ORCID,Kim Dae Hwan¹⁴^ORCID

Affiliation:

1. School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea

2. R&D Center, LG Display Co., Paju 10845, Republic of Korea

3. OLED TV Business Unit, LG Display Co., Paju 10845, Republic of Korea

4. Circadian ICT Research Center, Kookmin University, Seoul 02707, Republic of Korea

5. Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea

6. School of Electrical Engineering, Hanyang University, Ansan 15588, Republic of Korea

Funder

LG Display

National Research Foundation of Korea

Institute for Information and Communications Technology Promotion

SILVACO