Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3028340
Reference13 articles.
1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
3. High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
4. Stable room temperature deposited amorphous InGaZnO[sub 4] thin film transistors
5. Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
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