Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment-Reference-Cited by-同舟云学术

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Performance and Stability Enhancement of Fully Solution-Processed a-InZnO Thin-Film Transistors via Argon Plasma Treatment

Published:2023-11-08 Issue:11 Volume:5 Page:5872-5884
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Hanifah Umu¹,Bermundo Juan Paolo S.¹^ORCID,Kawanishi Hidenori¹^ORCID,Vasquez Magdaleno R.²^ORCID,Ilasin Mark D.²^ORCID,Uraoka Yukiharu¹

Affiliation:

1. Division of Materials Science, Nara Institute of Science and Technology, Nara 630-0101, Japan

2. Department of Mining, Metallurgical, and Materials Engineering, College of Engineering, University of the Philippines Diliman, Quezon City 1101, Philippines

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00841

Reference50 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

3. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping*

4. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

5. Fully Transparent and Rollable Electronics

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