8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions-Reference-Cited by-同舟云学术

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8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

Published:2019-09 Issue:S1 Volume:50 Page:75-78
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Wong Man¹,Xia Zhihe¹,Lu Lei¹²,Li Jiapeng¹,Kwok Hoi Sing¹²

Affiliation:

1. State Key Laboratory on Advanced Displays and Optoelectronics Technologies, Dept. of Electronic and Computer Engineering the Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong

2. HKUST Jockey Club Institute for Advanced Study Kowloon Hong Kong

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.13392

Reference17 articles.

1. A Bottom-Gate Metal–Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions

2. 49.1: Invited Paper: Emergent Oxide TFT Technologies for Next-Generation AM-OLED Displays

3. 13.2:Invited Paper: LTPS vs Oxide Backplanes for AMOLED Displays: System Design Considerations and Compensation Techniques

4. 7.1:Invited Paper: Novel OLED Display Technologies for Large-Size UHD OLED TVs

5. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

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