Electronic structure of an InAs monomolecular plane in GaAs
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.42.3064/fulltext
Reference29 articles.
1. Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxy
2. InAs monomolecular plane in GaAs grown by flow‐rate modulation epitaxy
3. Flow-Rate Modulation Epitaxy of GaAs
4. Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
5. Efficient Si Planar Doping in GaAs by Flow-Rate Modulation Epitaxy
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