A method for evaluating the ground state excitonic band gaps of strained InxGa1−xN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3257263
Reference41 articles.
1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Reduction of lasing threshold current density by the lowering of valence band effective mass
3. Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence‐band mixing effects
4. High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
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1. Epitaxial Lateral Overgrowth of {11-22} InGaN Layers Using Patterned InGaN Template and Improvement of Optical Properties from Multiple Quantum Wells;Crystals;2022-09-27
2. Characterization of high-quality relaxed flat InGaN template fabricated by combination of epitaxial lateral overgrowth and chemical mechanical polishing;Journal of Crystal Growth;2019-04
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4. Toward highly radiative white light emitting nanostructures: a new approach to dislocation-eliminated GaN/InGaN core–shell nanostructures with a negligible polarization field;Nanoscale;2014
5. Optical gain analysis of c-InGaN quantum wells on unstrained c-In0.31Ga0.69N templates;Applied Physics Letters;2013-01-07
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