Optical gain analysis of c-InGaN quantum wells on unstrained c-In0.31Ga0.69N templates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4774290
Reference21 articles.
1. 510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate
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3. InGaN laser diodes with 50 mW output power emitting at 515 nm
4. Investigation of long wavelength green InGaN lasers on c -plane GaN up to 529 nm continuous wave operation
5. Effects of macroscopic polarization in III-V nitride multiple quantum wells
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