Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates-Reference-Cited by-同舟云学术

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Structural and morphological qualities of InGaN grown via elevated pressures in MOCVD on AlN/Si(111) substrates

Published:2013-11 Issue: Volume:383 Page:1-8
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ho Jian Wei,Zhang Li,Wee Qixun,Tay Andrew A.O.,Heuken Michael,Chua Soo-Jin

Funder

National University of Singapore (NUS)

Singapore-MIT Alliance (SMA)

Agency of Science Technology and Research (A*STAR)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Small band gap bowing in In1−xGaxN alloys;Wu;Applied Physics Letters,2002

2. When group-III nitrides go infrared: new properties and perspectives;Wu;Journal of Applied Physics,2009

3. Superior radiation resistance of In1−xGaxN alloys: full-solar-spectrum photovoltaic material system;Wu;Journal of Applied Physics,2003

4. Modeling of InGaN/Si tandem solar cells;Hsu;Journal of Applied Physics,2008

5. Thermal stability of GaN on (111) Si substrate;Ishikawa;Journal of Crystal Growth,1998

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Longitudinal optical Raman mode A1 to calculate the indium molar fraction of epitaxial InGaN layers grown by LP-MOCVD on polar and non-polar planes;Journal of Materials Science: Materials in Electronics;2020-01-31

2. Simulation and optimization of a tandem solar cell based on InGaN;Mathematics and Computers in Simulation;2020-01

3. Immiscibility behind the metalorganic vapor phase epitaxy of InGaN;Japanese Journal of Applied Physics;2019-05-17

4. Preparation and properties of AlN (aluminum nitride) powder/thin films by single source precursor;New Journal of Chemistry;2019

5. Structural and Morphological Characteristics of Inxga1-xN Films Grown on SI (111) by Reactive Magnetron Sputtering;MATEC Web of Conferences;2016

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