Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence‐band mixing effects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103757
Reference18 articles.
1. Band-structure engineering for low-threshold high-efficiency semiconductor lasers
2. Reduction of lasing threshold current density by the lowering of valence band effective mass
3. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
4. Strained-layer InGaAs-GaAs-AlGaAs photopumped and current injection lasers
5. Gain characteristics of strained quantum well lasers
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