Electrostatic fields and compositional fluctuations in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.245305/fulltext
Reference19 articles.
1. Optical investigation of InGaN/GaN multiple quantum wells
2. “Blue” temperature-induced shift and band-tail emission in InGaN-based light sources
3. “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
4. InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy
5. An analysis of temperature dependent photoluminescence line shapes in InGaN
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1. Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C;Applied Physics Letters;2018-01-08
2. Ga-Polar (In,Ga)N/GaN Quantum Wells Versus N-Polar (In,Ga)N Quantum Disks in GaN Nanowires: A Comparative Analysis of Carrier Recombination, Diffusion, and Radiative Efficiency;Physical Review Applied;2017-07-27
3. The action of silicon doping in the first two to five barriers of eight periods In 0.2 Ga 0.8 N/GaN multiple quantum wells of blue LEDs;Journal of Luminescence;2016-09
4. Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN;Applied Physics Letters;2016-07-25
5. Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy;Journal of Alloys and Compounds;2016-01
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