Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C
Author:
Affiliation:
1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
2. Institute of High Pressure Physics, PAS, Sokołowska 29/37, 01142 Warszawa, Poland
3. TopGaN Ltd., Sokołowska 29/37, 01142 Warszawa, Poland
Funder
European Union Seventh Framework Programme
Polish National Centre for Research and Development
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5009184
Reference31 articles.
1. N-polar GaN epitaxy and high electron mobility transistors
2. N-Polar III–Nitride Green (540 nm) Light Emitting Diode
3. Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes
4. Characteristics of polarization-doped N-face III-nitride light-emitting diodes
5. Effect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
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