N-Polar III–Nitride Green (540 nm) Light Emitting Diode
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference19 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes
3. Wavelength-stable cyan and green light emitting diodes on nonpolar m-plane GaN bulk substrates
4. 30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
5. Lasers get the green light
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1. Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy;APL Materials;2023-08-01
2. Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy;APL Materials;2021-12-01
3. Improvement of The Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad;ECS Journal of Solid State Science and Technology;2019-12-19
4. Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes;Superlattices and Microstructures;2019-11
5. Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes;Physica Scripta;2019-08-06
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