Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes

Published:2019-11 Issue: Volume:135 Page:106271
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Usman Muhammad,Anwar Abdur-Rehman,Munsif Munaza,Malik Shahzeb,Islam Noor Ul

Funder

Higher Education Commission of Pakistan

Hanyang University

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference47 articles.

1. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays;DenBaars;Acta Mater.,2013

2. Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting;Feezell;Compt. Rendus Phys.,2018

3. The efficiency challenge of nitride light‐emitting diodes for lighting;Weisbuch;Phys. Status Solidi (a),2015

4. Efficiency droop in light‐emitting diodes: challenges and countermeasures;Cho;Laser Photonics Rev.,2013

5. Gallium-nitride-based light-emitting diodes;Murali;Resonance,2015

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5. Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence;Facta universitatis - series: Electronics and Energetics;2023

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