Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

Published:2021-12-01 Issue:12 Volume:9 Page:121114
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Khan K.¹^ORCID,Diez S.²^ORCID,Sun Kai¹^ORCID,Wurm C.³^ORCID,Mishra U. K.³,Ahmadi E.²⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA

3. Department of Electrical and Computer Engineering, UCSB, Santa Barbara, California 93106, USA

4. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Office of Naval Research

National Science Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063285

Reference34 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Prospects for LED lighting

3. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters;AIP Advances;2024-02-01

2. Demonstration of 82% relaxed In_0.18G_a0.82N on porous GaN pseudo-substrate by plasma-assisted molecular beam epitaxy;Physica Scripta;2023-12-29

3. Correlative analysis on InGaN/GaN nanowires: structural and optical properties of self-assembled short-period superlattices;Discover Nano;2023-03-01

4. N-polar GaN: Epitaxy, properties, and device applications;Progress in Quantum Electronics;2023-01

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