The action of silicon doping in the first two to five barriers of eight periods In 0.2 Ga 0.8 N/GaN multiple quantum wells of blue LEDs-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

The action of silicon doping in the first two to five barriers of eight periods In 0.2 Ga 0.8 N/GaN multiple quantum wells of blue LEDs

Published:2016-09 Issue: Volume:177 Page:59-64
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Chen Meng-Chu,Cheng Yung-Chen,Huang Chun-Yuan,Wang Hsiang-Chen,Lin Kuang-I,Yang Zu-Po

Funder

National University of Tainan

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference33 articles.

1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

2. Novel metalorganic chemical vapor deposition system for GaN growth

3. Origin of Luminescence from InGaN Diodes

4. Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces

5. Electrostatic fields and compositional fluctuations in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of RF power in growth and characterization of RF magnetron sputtering GaN/glass thin film;Emerging Materials Research;2019-09-01

2. Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates;Nanoscale Research Letters;2018-08-22

3. Nanostructure analysis of InGaN/GaN quantum wells based on semi-polar-faced GaN nanorods;Optical Materials Express;2017-01-05

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3