Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy-Reference-Cited by-同舟云学术

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Carrier localization and phonon-assisted hopping effects in semipolar InGaN/GaN light-emitting dioses grown by selective area epitaxy

Published:2016-01 Issue: Volume:656 Page:881-886
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Zeng Fanming,Zhu Lihong,Liu Wei,Li Xiaoying,Liu Weicui,Chen Bo-Jhih,Lee Yueh-Chien,Feng Zhe Chuan,Liu Baolin

Funder

National Natural Science Foundation of China

Xiamen University Graduate School

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference58 articles.

1. Nitride-based semiconductors for blue and green light-emitting devices;Ponce;Nature,1997

2. Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells;Im;Phys. Rev. B,1998

3. Solid phase immiscibility in GaInN;Ho;Appl. Phys. Lett.,1996

4. Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum wells;Zhu;IEEE Photonics J.,2013

5. High-power blue-violet semipolar (20-2-1) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cmˆ2;Zhao;Appl. Phys. Express,2011

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fine Photoluminescence Spectroscopic Characterization of Interfacial Effects on Emission Properties of InGaN/GaN Multiple Quantum Wells in a Blue-Light Laser Diode Structure;SPECTROSC SPECT ANAL;2022

2. A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations;Optics and Spectroscopy;2022-03

3. Semipolar ( $$ 1\bar{1}01 $$ 1 1 ¯ 01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate;Journal of Materials Science;2019-02-25

4. Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates;Applied Physics A;2019-01-29

5. Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells;Nanoscale Research Letters;2017-02-21

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