InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy-Reference-Cited by-同舟云学术

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InGaN/GaN quantum wells studied by high pressure, variable temperature, and excitation power spectroscopy

Published:1998-11-09 Issue:19 Volume:73 Page:2778-2780
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Perlin Piotr,Kisielowski Christian,Iota Valentin,Weinstein B. A.,Mattos Laila,Shapiro Noad A.,Kruger Joachim,Weber Eicke R.,Yang Jinwei

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.122588

Reference26 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

3. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition

4. Atomic Scale Indium Distribution in aGaN/In0.43Ga0.57N/Al0.1Ga0.9NQuantum Well Structure

5. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

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2. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis;IEEE Transactions on Electron Devices;2024-03

3. Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template;Crystal Growth & Design;2023-04-20

4. Optical properties of donor impurity in Yukawa like potential: application to SiGe/Si and Si/SiGe;Physica Scripta;2023-04-06

5. Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells;Results in Physics;2023-03

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