Thermodynamically driven Ge/Si place exchange induced by hydrogen on Ge-covered Si(001) surfaces
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.61.7293/fulltext
Reference32 articles.
1. Semiconductor nanostructures: a new impact on electronics
2. Si/Si1−xGex and Si/Si1−yCy heterostructures: materials for high-speed field-effect transistors
3. Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer Islands
4. Vacancy-Vacancy Interaction on Ge-Covered Si(001)
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1. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
2. Disilane chemisorption on SixGe1−x(100)-(2×1): Molecular mechanisms and implications for film growth rates;The Journal of Chemical Physics;2009-07-28
3. Real-time stress analysis of low-temperature Ge nanodot growth on H-terminated Si(111) 1×1 and Si(111) 7×7 surfaces;Current Applied Physics;2008-05
4. Reassessment of the molecular mechanisms for H2 thermal desorption pathways from Si(1−x)Gex(001)-(2×1) surfaces;The Journal of Chemical Physics;2007-01-28
5. Hydrogen adsorption on graphite (0001) surface: A combined spectroscopy–density-functional-theory study;The Journal of Chemical Physics;2005-09-22
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