Real-time stress analysis of low-temperature Ge nanodot growth on H-terminated Si(111) 1×1 and Si(111) 7×7 surfaces-Reference-Cited by-同舟云学术

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Real-time stress analysis of low-temperature Ge nanodot growth on H-terminated Si(111) 1×1 and Si(111) 7×7 surfaces

Published:2008-05 Issue:3-4 Volume:8 Page:246-248
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Asaoka H.,Yamazaki T.,Shamoto S.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference11 articles.

1. Adsorption and Diffusion of Si Atoms on the H-Terminated Si(001) Surface: Si Migration Assisted by H Mobility

2. Adsorption and Diffusion of Si Adatom on Hydrogenated Si(100) Surfaces

3. Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001)

4. Control of surface composition on Ge/Si(001) by atomic hydrogen irradiation

5. Thermodynamically driven Ge/Si place exchange induced by hydrogen on Ge-covered Si(001) surfaces

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Stress Contrast between Reconstruction and Termination on Silicon (111);2019 IEEE 9th International Conference Nanomaterials: Applications & Properties (NAP);2019-09

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