Modification of Si(100) Substrate Bonding by Adsorbed Ge or Si Dimer Islands
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.81.2288/fulltext
Reference17 articles.
1. Atomistic Processes in the Early Stages of Thin-Film Growth
2. Scanning tunneling microscopy of Si(001)
3. Direct observation of an increase in buckled dimers on Si(001) at low temperature
4. Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces
5. Evidence of pairing and its role in the recombinative desorption of hydrogen from the Si(100)-2×1 surface
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1. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
2. Magic Monatomic Linear Chains for Mn Nanowire Self-Assembly on Si(001);Physical Review Letters;2010-09-08
3. Formation of manganese nanostructures on the Si(100)-(2×1) surface;Surface Science;2008-02
4. First-principles study of indium on silicon (100)—the structure, defects and interdiffusion;Surface Science;2004-11
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