Vacancy-Vacancy Interaction on Ge-Covered Si(001)
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.73.850/fulltext
Reference14 articles.
1. Missing dimers and strain relief in Ge films on Si(100)
2. Scanning tunneling microscopy studies of the growth process of Ge on Si(001)
3. Layer-by-layer growth of germanium on Si(100): strain-induced morphology and the influence of surfactants
4. 2×nsurface structure of SiGe layers deposited on Si(100)
5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
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