2×nsurface structure of SiGe layers deposited on Si(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107574
Reference18 articles.
1. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
2. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
3. Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2×1 surface
4. Observation of Order-Disorder Transitions in Strained-Semiconductor Systems
5. Long-range order in thick, unstrainedSi0.5Ge0.5epitaxial layers
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