Disilane chemisorption on SixGe1−x(100)-(2×1): Molecular mechanisms and implications for film growth rates
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3191780
Reference51 articles.
1. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
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2. Specific Features of the Interaction of a Germane Molecule with Germanium Surface in Vacuum in the Presence of Hydrogen Flow;Technical Physics;2021-07
3. Kinetics of the decomposition of disilane on a silicon growth surface into two non-identical radicals;Russian Journal of Physical Chemistry B;2016-03
4. Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials;Journal of Applied Physics;2015-05-28
5. Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions;Semiconductors;2014-06
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