MIRIRS studies of the growth of Si and Si-Ge alloys from molecular precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference32 articles.
1. Low Temperature Silicon Epitaxy Using Si2 H 6
2. Gas source silicon molecular beam epitaxy using disilane
3. Cooperative growth phenomena in silicon/germanium low‐temperature epitaxy
4. Heterojunction bipolar transistor fabrication using Si1−xGexselective epitaxial growth by gas source silicon molecular beam epitaxy
5. Limited reaction processing: Growth of Si1−xGex/Si for heterojunction bipolar transistor applications
Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
2. Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth;The Journal of Physical Chemistry C;2013-12-24
3. Evolution of Hydride Components Generated by Hydrogen Plasma Irradiation of a Si(110) Surface Investigated With In Situ Infrared Absorption Spectroscopy in Multiple Internal Reflection Geometry;IEEE Transactions on Plasma Science;2013-08
4. Si2H6Dissociative Chemisorption and Dissociation on Si(100)-(2×1) and Ge(100)-(2×1);The Journal of Physical Chemistry C;2011-11-29
5. Revisiting the vibrational spectra of silicon hydrides on Si(100)-(2×1) surface: What is on the surface when disilane dissociates?;The Journal of Chemical Physics;2010-08-21
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