The effect of germanium on the desorption of hydrogen from Si(100)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Reference56 articles.
1. Low‐temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
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4. Equilibrium surface hydrogen coverage during silicon epitaxy using SiH4
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2. Ab Initio Study of H2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2×1) Surfaces;The Journal of Physical Chemistry C;2014-05-01
3. Theoretical investigation of an intermediate in the STM tip-induced atomic process on H/Si(100) surfaces;Physical Review B;2010-05-03
4. Hydrogen desorption kinetics and band bending for 6H–SiC(0 0 0 1) surfaces;Surface Science;2009-10
5. Disilane chemisorption on SixGe1−x(100)-(2×1): Molecular mechanisms and implications for film growth rates;The Journal of Chemical Physics;2009-07-28
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