Theoretical investigation of an intermediate in the STM tip-induced atomic process on H/Si(100) surfaces
Author:
Publisher
American Physical Society (APS)
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.81.205301/fulltext
Reference53 articles.
1. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms
2. Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorption
3. Electron-stimulated desorption of hydrogen from the Si(111) surface by scanning tunneling microscopy
4. Site-Specific Displacement of Si Adatoms on Si(111)-(7×7)
5. Nanometer-scale lithography on Si(001) using adsorbed H as an atomic layer resist
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1. Local removal of silicon layers on Si(1 0 0)-2 × 1 with chlorine-resist STM lithography;Applied Surface Science;2020-04
2. Tunnel-Current Induced STM Atomic Manipulation;Atomic and Molecular Manipulation;2011
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