Pathways for hydrogen desorption fromSi1−xGex(001)during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.4803/fulltext
Reference26 articles.
1. B‐doped fully strained Si1−xGexlayers grown on Si(001) by gas‐source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties
2. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
3. Prospects of SiGe heterodevices
4. High-performance Si/SiGe n-type modulation-doped transistors
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