B‐doped fully strained Si1−xGexlayers grown on Si(001) by gas‐source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363407
Reference67 articles.
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