Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6-Reference-Cited by-同舟云学术

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Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6

Published:2013-05 Issue: Volume:83 Page:2-9
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Wirths S.,Buca D.,Tiedemann A.T.,Bernardy P.,Holländer B.,Stoica T.,Mussler G.,Breuer U.,Mantl S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state;Rauter;Appl Phys Lett,2011

2. Fast time response from Si–SiGe undulating layer superlattices;Buca;Appl Phys Lett,2002

3. Zuffada M. The industrialization of the silicon photonics: technology road map and applications. In: Proceedings ESSDERC; 2012. p. 7–13.

4. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors;Lee;J Appl Phys,2005

5. Strain: a solution for higher carrier mobility in nanoscale MOSFETs;Chu;Annu Rev Mater Res,2009

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4. Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs;IEEE Transactions on Electron Devices;2016-11

5. A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe;ECS Transactions;2016-08-18

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