Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-021-00973-0.pdf
Reference34 articles.
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3. Boucart K, Ionescu AM (2007) Double-gate tunnel FET with high-k gate dielectric. IEEE Trans Electron Devices 54:1725–1733
4. Baravelli E, Gnani E, Gnudi A, Reggiani S, Baccarani G (2014) TFET inverters with n-/p-devices on the same technology platform for low-voltage/low-power applications. IEEE Trans Electron Devices 61:473–478
5. Sahoo S, Dash S, Routray SR, Mishra GP (2020) Impact of drain doping engineering on ambipolar and high-frequency performance of ZHP line-TFET. Semicond Sci Technol 35:065003–065001
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