Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference37 articles.
1. Qian X, Jun X, Yuan T (2012) Review and critique of analytic models of MOSFET short-channel effects in subthreshold. IEEE Trans Electron Dev 59(6):1569–1579
2. Datta S, Liu H, Narayanan V (2014) Tunnel FET technology: a reliability perspective. Microelectron Reliab 54(5):861–874
3. Ko E, Shin J, Shin C (2018) Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors. Nano Convergence 5:2-1-9
4. Ionescu AM, Riel H (2011) Tunnel field effect transistor as energy efficient electronic switches. Nature 479:329–337
5. Gupta N, Makosiej A, Amara A, Vladimirescu A, Anghel C (2021) TFET integrated circuits: from perspective towards reality. Springer 1:1–139
Cited by
18 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献