Ambipolarity Suppression of Band Gap and Gate Dielectric Engineered Novel Si0.2Ge0.8/GaAs JLTFET Using Gate Overlap Technique
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02624-y.pdf
Reference55 articles.
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2. Leung G, Chui CO (2013) Stochastic variability in silicon double-gate lateral tunnel field-effect transistors. IEEE Trans Electron Devices 60:84–91. https://doi.org/10.1109/TED.2012.2226725
3. Talukdar J, Rawat G, Mummaneni K (2020) A novel extended source TFET with δp+- SiGe layer. Silicon 12:2273–2281. https://doi.org/10.1007/s12633-019-00321-3
4. Kim JH, Kim S, Park BG (2019) Double-gate TFET with vertical channel sandwiched by lightly doped Si. IEEE Trans Electron Devices 66:1656–1661. https://doi.org/10.1109/TED.2019.2899206
5. Chen S, Wang S, Liu H et al (2020) A novel dopingless fin-shaped SiGe channel TFET with improved performance. Nanoscale Res Lett 15:202. https://doi.org/10.1186/S11671-020-03429-3
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