Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference32 articles.
1. Chunlei Wu, Qianqian Huang, , Yang Zhao, Jiaxin Wang, Yangyuan Wang and Ru Huang (2016) A novel tunnel FET design with StackedSource configuration for average subthreshold swing reduction. IEEE Trans. on Electron Devices 63(12):5072–5076
2. Khatami Y, Banerjee K (2009) Steep subthreshold slope n- and p-type tunnel-FET devices for low-power and energy-efficient digital circuits. IEEE Trans Electron Devices 56(11):2752–2761
3. Guo P-F, Yang L-T, Yang Y, Fan L, Han G-Q, Samudra G, Yeo Y-C (2009) Tunneling field-effect transistor: effect of strain and temperature on tunneling current. IEEE Elect Device Lett 30(9):981–983
4. Jeon K, Loh W-Y, Patel P, Kang Y, Oh J, Bowonder A, Park C, Park C, Smith C, Majhi P, Tseng H-H, Jammy R, Liu T-J, Hu C (2010) Si tunnel transistors with a novel silicided source and 46 mv/dec swing. Proc. VLSIT Symp:121–122
5. Qin Z, Wei Z, Seabaugh A (2006) Low-subthreshold-swing tunnel transistors. IEEE Electron Device Lett 27(4):297–300
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