Steep subthreshold swing Double - Gate tunnel FET using source pocket engineering: Design guidelines-Reference-Cited by-同舟云学术

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Steep subthreshold swing Double - Gate tunnel FET using source pocket engineering: Design guidelines

Published:2024-11 Issue: Volume:195 Page:207951
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Yadav Nisha,Jadav Sunil^ORCID,Saini Gaurav

Publisher

Elsevier BV

Reference38 articles.

1. On the 60 mV/dec @300 K limit for MOSFET Subthreshold Swing;Cheung,2010

2. Tunnel field-effect transistors as energyefficient electronic switches;Ionescu;Nature,2011

3. Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec;Choi;IEEE Electron. Device Lett.,2007

4. Double-gate tunnel FET with high-κ gate dielectric;Boucart;IEEE Trans. Electron. Dev.,2007

5. Performance enhancement of vertical tunnel field-effect transistor with SiGe in the delta p+ layer;Bhuwalka;Jpn. J. Appl. Phys.,2004

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