Low Power Circuit and System Design Hierarchy and Thermal Reliability of Tunnel Field Effect Transistor
Author:
Funder
NA
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01088-2.pdf
Reference29 articles.
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2. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373):329–337. https://doi.org/10.1038/nature10679
3. Guo PF, Yang LT, Yang Y, Fan L, Han GQ, Samudra GS, Yeo YC (2009) Tunneling field-effect transistor: effect of strain and temperature on tunneling current. IEEE Electron Device Letters 30(9):981–983. https://doi.org/10.1109/LED.2009.2026296
4. Bordallo, C.C., Martino, J.A., Agopian, P.G., Rooyackers, R., Vandooren, A., Thean, A., Simoen, E. and Claeys, C., 2015. Analysis of analog parameters in NW-TFETs with Si and SiGe source composition at high temperatures. In 2015 30th symposium on microelectronics technology and devices (SBMicro) (pp. 1-4). IEEE. doi: https://doi.org/10.1109/SBMicro.2015.7298148
5. Bentrcia T, Djeffal F, Ferhati H, Dibi Z (2020) A comparative study on scaling capabilities of Si and SiGe nanoscale double gate tunneling FETs. Silicon 12(4):945–953. https://doi.org/10.1007/s12633-019-00190-
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