Tensile strained SiGe quantum well infrared photodetectors based on a light-hole ground state
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3593134
Reference9 articles.
1. Ge-on-Si laser operating at room temperature
2. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
3. Conduction band intersubband transitions in Ge/SiGe quantum wells
4. Silicon-based injection lasers using electronic intersubband transitions in the L valleys
5. Intersubband Electroluminescence from Silicon-Based Quantum Cascade Structures
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