Conduction mechanism and shallow donor properties in silicon-dopedɛ-Ga2O3thin films: An electron paramagnetic resonance study-Reference-Cited by-同舟云学术

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Conduction mechanism and shallow donor properties in silicon-dopedɛ-Ga2O3thin films: An electron paramagnetic resonance study

Published:2019-08-02 Issue:8 Volume:3 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

von Bardeleben H. J.,Cantin J. L.,Parisini A.,Bosio A.,Fornari R.

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.3.084601/fulltext

Reference30 articles.

1. A review of Ga2O3materials, processing, and devices

2. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

3. Heteroepitaxy of Corundum-Structured α-Ga2O3Thin Films on α-Al2O3Substrates by Ultrasonic Mist Chemical Vapor Deposition

4. Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire

5. The real structure of ε-Ga2O3 and its relation to κ-phase

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1. Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments;Materials Today Physics;2024-06

2. Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001);Nano Letters;2024-03-07

3. Surface two-dimensional hole gas in Si doped β-Ga2O3 thin film;Journal of Alloys and Compounds;2024-01

4. High temperature annealing of n-type bulk β-Ga2O3: Electrical compensation and defect analysis—The role of gallium vacancies;Journal of Applied Physics;2023-10-24

5. Surface defect compensation of Ga2O3 thin films N-doped by nitrogen plasma for enhanced electrical performance and luminescence effect;Journal of Applied Physics;2023-07-06

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